RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN
500V 16A D2 MOSFET, 590W, 175°C, Lead Free
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
IC, DRIVER, MOSFET DE275
MOSFET, N, RF, DE275 - More Details
RF MOSFET 2N-CHANNEL DE275
RF MOSFET N-CHANNEL DE275
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET,