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Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
CM600DY-24A
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
MODULE-7
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 3V
Input: Standard
+10
CM600DY-24A
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Pin Count: 7
+1
Insulated Gate Bipolar Transistor,
CM600DY-24S
Powerex

Insulated Gate Bipolar Transistor,

Datasheet
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Saturation Voltage: 1.85V
Collector Emitter Voltage (VCEO): 1.2kV
+11
CM600DY-34H
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, POWER MODULE-10

Datasheet
FLANGE MOUNT, R-MUFM-X10
Transferred
Max Operating Temperature: 150
Number of Terminals: 10
Terminal Position: UPPER
Pin Count: 10
+1
CM600DY-34H
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X10
Active
Max Operating Temperature: 150
Number of Terminals: 10
Terminal Position: UPPER
Number of Elements: 2
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-7
CM600DY-12NF
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Datasheet
MODULE-7
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 600V
Collector-emitter Voltage-Max: 2.2V
Current Rating: 600A
+13
CM600DY-12NF
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Pin Count: 7
+1
CM600DU-24F
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 2.55V
Input: Standard
+10
CM600DU-24F
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
MODULE-7
Not Recommended
Max Operating Temperature: 150
Number of Terminals: 6
Terminal Position: UPPER
Pin Count: 7
+1
CM600DU-5F
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2
CM600DU-5F
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 250V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 250V
Collector-emitter Voltage-Max: 1.7V
Current Rating: 600A
+13
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
CM600DU-24NF
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Transferred
Capacitance: 0.000000024F
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 2.65V
+14
CM600DU-24NF
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X5
Active
Max Operating Temperature: 150
Number of Terminals: 5
Terminal Position: UPPER
Pin Count: 7
+1
CM600DXL-24S
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-14

Datasheet
MODULE-14
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.85V
Collector-emitter Voltage-Max: 2.3V
+10
CM600DX-24S1
Mitsubishi

Insulated Gate Bipolar Transistor,

Datasheet
Active
CM600DU-24NFH
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Saturation Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
+14
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
CM600HA-24A
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4

Datasheet
FLANGE MOUNT, R-XUFM-X4
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Saturation Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
+14
CM600HB-24A
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4

Datasheet
FLANGE MOUNT, R-XUFM-X4
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 3V
Input: Standard
+10
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-9
CM600HX-24A
Powerex

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-9

Datasheet
MODULE-9
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 2.6V
Input: Standard
+9
CM600DU-24NFH
Mitsubishi

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Pin Count: 7
+1