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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,
CM200DU-24F
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Saturation Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
+12
CM200DU-24F
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
Obsolete
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2
CM200DU-24H
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
Not Recommended
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,
CM200DU-24H
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Saturation Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
+13
CM200DU-12H
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Datasheet
MODULE-7
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 600V
Collector-emitter Voltage-Max: 3V
Current Rating: 200A
+13
CM200DU-12F
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7
CM200DU-12F
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Not Recommended
Package/Case: Module
Collector Emitter Breakdown Voltage: 600V
Collector-emitter Voltage-Max: 2.2V
Current Rating: 200A
+13
CM200DU-12H
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,

Datasheet
Not Recommended
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2
CM200DU-24NFH
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Pin Count: 7
+1
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
CM200DU-24NFH
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
MODULE-7
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
Collector-emitter Voltage-Max: 6.5V
+11
CM200DU-34KA
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2
CM200DU-34KA
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Not Recommended
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.7kV
Collector-emitter Voltage-Max: 4V
Input: Standard
+10
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7
CM200DU-12NFH
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Datasheet
MODULE-7
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 600V
Collector Emitter Saturation Voltage: 600V
Collector Emitter Voltage (VCEO): 600V
+13
CM200DU-12NFH
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Pin Count: 7
+1
CM200DY-24A
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X7
Active
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Pin Count: 7
+1
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,
CM200DY-24H
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
Collector-emitter Voltage-Max: 3.4V
+12
CM200DY-24A
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Datasheet
FLANGE MOUNT, R-XUFM-X5
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 3V
Input: Standard
+11
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
CM200DX-24S
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Datasheet
FLANGE MOUNT, R-XUFM-X11
Transferred
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector Emitter Voltage (VCEO): 1.2kV
Collector-emitter Voltage-Max: 2.15V
+11
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
CM200DX-24A
Powerex

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Datasheet
MODULE-11
Obsolete
Package/Case: Module
Collector Emitter Breakdown Voltage: 1.2kV
Collector-emitter Voltage-Max: 2.6V
Input: Standard
+10
CM200DY-24H
Mitsubishi

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,

Datasheet
FLANGE MOUNT, R-XUFM-X7
Obsolete
Max Operating Temperature: 150
Number of Terminals: 7
Terminal Position: UPPER
Number of Elements: 2