Vishay
SI2333DS-T1
Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
PackageTO-236
Power1.25W
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Technical Specifications
Vishay SI2333DS-T1 technical specifications.
General
| Package/Case | TO-236 |
| Continuous Drain Current (ID) | -4.1A |
| Drain to Source Resistance | 32mR |
| Power Dissipation | 1.25W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI2333DS-T1 Datasheet
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