RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN
RF POWER, FET
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, POWER, PLASTIC, CASE 466-02, 4 PIN
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN
TRANSISTOR,MOSFET,N-CHANNEL,25V V(BR)DSS,4A I(D),PLD
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,4A I(D),PLD
