FQB7N65CTM

650V 7A N-CH MOSFET, 1.4R Rds On, TO-263

N-channel MOSFET featuring 650V drain-to-source breakdown voltage and 7A continuous drain current. This surface mount component offers 1.4 Ohm Rds On, a 4V threshold voltage, and 173W maximum power dissipation. Designed for efficient switching, it exhibits a 55ns fall time and 90ns turn-off delay time, with a 1.245nF input capacitance. Packaged in a TO-263-3 (D2PAK) case, this RoHS compliant device operates from -55°C to 150°C.

PackageTO-263-3

Current Rating7A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQB7N65CTM technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	7A
Current Rating	7A
Drain to Source Breakdown Voltage	650V
Drain to Source Resistance	1.4R
Drain to Source Voltage (Vdss)	650V
Fall Time	55ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.245nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	173W
Mount	Surface Mount
Package Quantity	800
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	173W
Rds On Max	1.4R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	4V
Turn-Off Delay Time	90ns
DC Rated Voltage	650V